Integrated circuit
CA 2014296 C · Owner: Mikoshiba, Nobuo · Inventors: Masu, Kazuya; Tsubouchi, Kazuo; Mikoshiba, Nobuo
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
A depletion operation is realized by using a depletion type MOSFET even at the room temperature or the liquid nitrogen temperature without doping the channel portion below the gate electrode with impurities having a conductivity type, which is opposite to the conductivity type of the semiconductor substrate. Further this FET can construct an inverter together with an enhancement type FET and these can be integrated on one substrate.
Read the whole patent
Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed April 10, 1990 and granted August 1, 2000. A Canadian patent filed from October 1, 1989 lasts 20 years from filing, so its term ended April 10, 2010.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by April 10, 2012.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.