Semiconductor device isolation
CA 2014048 C · Owner: Yoshii, Ichiro · Inventors: Takatsuka, Satoru; Hatano, Hiroshi; Yoshii, Ichiro
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
In a semiconductor device having at least two conductive layers disposed close to each other on an element isolating insulation film formed on a first P-type region, a second P-type region is formed in a region of the first P-type region which is between the two conductive layers. The impurity concentration of the second P-type diffusion region is higher than the first P-type region. A region of the element isolating insulation film which is on the second P-type diffusion region is thin to form a thin insulation film. With the features, no inversion layer is formed in the region of the first P-type region where the second P-type diffusion region is formed. As a result, the inversion layers …
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed April 6, 1990 and granted December 20, 1994. A Canadian patent filed from October 1, 1989 lasts 20 years from filing, so its term ended April 6, 2010.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by April 6, 2012.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.