Fet, igbt and mct structures to enhance operating characteristics
CA 2013349 C · Owner: Chow, Tat-Sing Paul · Inventors: Temple, Victor Albert Keith; Chow, Tat-Sing Paul
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
Doping of the P type base region in a MOSFET or an IGBT with a combination of boron and one or more of indium aluminum and gallium, provides a structure having a lower P type doping level in the channel portion of the structure than in the remainder of the structure without requiring counter doping of the channel. The doping level of the emitter region of an MCT is kept high everywhere except in the channel in order to provide a fast turn-off time for the MCT.
Read the whole patent
Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed March 29, 1990 and granted January 30, 2001. A Canadian patent filed from October 1, 1989 lasts 20 years from filing, so its term ended March 29, 2010.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by March 29, 2012.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.