X-ray lithography mask and devices made therewith

Abstract From the Canadian patent

Abstract, A mask for X-ray lithography is produced by initially forming a thin layer of polycrystalline silicon on a silicon oxide containing substrate. A portion of the substrate at the periphery of the major surface opposite the silicon layer is masked. The exposed portion of the substrate is removed by an etchant that is selective for silicon oxide containing composition relative to silicon e.g. aqueous, HF. The resulting membrane of silicon on a peripheral region of silicon oxide containing composition is in tensile stress as required for lithography but is robust. Metal, X-ray absorbing patterns are formed on the silicon by standard lithographic procedures.