Substrate for a semiconductor device and method of preparation thereof
CA 2011986 C · Owner: Gibbings, Christopher J. · Inventors: Tuppen, Christopher G.; Gibbings, Christopher J.
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
In order to grow single crystal, solid state devices onto a mismatched substrate, a secondary substrate is obtained by growing an epilayer divided into mesas onto the primary substrate. The epilayer is annealed and this relieves the strain and causes dislocations to terminate preferentially on the sides of the mesas.
Read the whole patent
Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed March 12, 1990 and granted October 6, 1998. A Canadian patent filed from October 1, 1989 lasts 20 years from filing, so its term ended March 12, 2010.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by March 12, 2012.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.