Multilayered intermetallic connection for semiconductor devices
CA 2009247 C · Owner: White, James F. · Inventors: Totta, Paul A.; Rodbell, Kenneth P.; White, James F.
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
A sputtered low copper concentration multilayered, device interconnect metallurgy structure is disclosed herein. The interconnect metallization structure comprises a sputtered aluminum-copper (< 2) weight percent copper conductor. In the preferred embodiment, the AlCu conductor has formed on one or both of its surfaces a layer of an intermetallic compound formed from a Group IVA metal and aluminum. The Group IVA metal is deposited by sputtering. Optionally onto said top intermetallic layer is, further deposited a non-reflective non-corrosive, etch-stop, capping layer.
Read the whole patent
Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed February 2, 1990 and granted April 6, 1993. A Canadian patent filed from October 1, 1989 lasts 20 years from filing, so its term ended February 2, 2010.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by February 2, 2012.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.