Vapor-phase epitaxial growth method
CA 2008946 C · Owner: Hata, Masahiko · Inventors: Watanabe, Takeshi; Maeda, Takayoshi; Fukuhara, Noboru
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
A vapor-phase epitaxial growth method for producing a Groups III-V compound semiconductor containing arsenic by vapor-phase epitaxial growth using arsenic trihydride as an arsenic source is disclosed, wherein said arsenic trihydride has a volatile impurity concentration of not more than 1.5 molppb on a germanium tetrahydride conversion. The resulting epitaxial crystal has a low residual carrier concentration and is applicable to a field effect transistor.
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed January 30, 1990 and granted February 23, 1999. A Canadian patent filed from October 1, 1989 lasts 20 years from filing, so its term ended January 30, 2010.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by January 30, 2012.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.