Method for the epitaxial growth of a semiconductor structure
CA 2006266 C · Owner: Galeuchet, Yvan · Inventors: Graf, Volker; Roentgen, Peter; Heuberger, Wilhelm
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
A method, and devices produced therewith for the epi-, taxial growth of sub-micron semiconductor structures with at least one crystal plane dependently grown buried, active layer (24) consisting of a III-V compound. The active layer (24) and adjacent embedding layers (23 25), form a heterostructure produced in a one-step growth process not requiring removal of the sample from the growth chamber inbetween layer depositions. The layers of the structure are grown on a semiconductor substrate (21) having a structured surface exposing regions of different crystal orientation providing growth- and no-growthplanes for the selective growth process. The method allows the production of multiple, …
Read the whole patent
Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed December 20, 1989 and granted January 12, 1993. A Canadian patent filed from October 1, 1989 lasts 20 years from filing, so its term ended December 20, 2009.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by December 20, 2011.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.