Inp/gainasp double heterostructure laser diodes containing built-in closing p-n junctions on a double channeled substrate, with buried active layer and its production by means of the one-step liquid phase epitaxy
CA 2005555 A1 · Owner: Labadi, Zoltan · Inventors: Lendvay, Odon; Habermayer, Istvan; Rakovics, Vilmos
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
The wafer containing the laser structure grown in the described way, is thinned on the backside (17) preferably to 100-200 /um thereafter, onto the p-side (16) preferably Au/Au Zn is applied in a thickness of 200-1400 ° as a contact metal layer (8a) while, onto the n-side (17) contact metal layer (Bb) is applied pre-, ferably Au Ge/Ni/Au in a thickness of 3000/700/1000 .ANG. by means of vaporization, thereafter contact layers (Ba,Bb) are subjected to heat treatment at 420 C° in H2 gas space preferably for 1D, seconds.
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed December 14, 1989. No grant is recorded for it in Canada; had it been granted, its 20-year term would have ended December 14, 2009.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by December 14, 2011.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.