Etching of integrated-circuit device metallization and resulting device
CA 2004281 A1 · Owner: Huttemann, Robert D. · Inventors: Tsai, Nun-Sian; Huttemann, Robert D.
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
Abstract Prior to photolithographic patterning, metallization layers deposited in the manufacture of integrated-circuit devices preferably are planarized by over-all etching. In the interest of monitoring such etch process - for the sake of leaving a residual layer having precisely specified thickness a metallization layer preferably, has sublayered structure whose removal can be optically monitored sublayer by sublayer, e.g. by so-called laser trace.
Read the whole patent
Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed November 30, 1989. No grant is recorded for it in Canada; had it been granted, its 20-year term would have ended November 30, 2009.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by November 30, 2011.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.