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Method and apparatus for microwave transient spectroscopy of deep levels in semiconductors

CA 2003670 A1 · Owner: Mirk, Zoltan · Inventors: Mojzes, Imre; Boda, Janos; Mirk, Zoltan

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Abstract From the Canadian patent

Method and apparatus for microwave transient spectroscopy of deep levels in semiconductors, in which a sample (14) of the semiconductor material is placed in the field of a microwave resonator (13) and terminals of a junction in the sample are excited by a pulse generator (20). The reactive component of the loading impedance caused by the presence of the sample in the field of the resonator (13) causes periodic shifting of the resonance curve of the resonator along the frequency axis. The resonator (13) is excited by a microwave generator (12) slightly off tuned to the resonance frequency of the resonator so that the microwave energy in the resonator get amplitude modulated by said changes …

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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.

Why it's free to use

  • Filed November 23, 1989. No grant is recorded for it in Canada; had it been granted, its 20-year term would have ended November 23, 2009.
  • A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by November 23, 2011.
  • We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
FiledNovember 23, 1989
GrantedNo grant recorded
Term endedNovember 23, 2009
Patent numberCA 2003670 A1
Classification (IPC)G01N22/00

Timeline

Timeline From CIPO dates

1990199219941996199820002002200420062008Application filedNov 23, 1989Term endedNov 23, 2009

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Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.