Method of growing silicon ingots using a rotating melt
CA 2000243 A1 · Owner: Khattak, Chandra P. · Inventors: Schmid, Frederick; Khattak, Chandra P.
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
The invention is a method and apparatus for producing silicon ingots of substantially single crystallinity from metallurgical grade silicon by heating it in a crucible to above its melting point to melt it and then extracting heat from the bottom of the crucible with a heat exchanger in heat conducting relationship with the bottom, and by moving the crucible and growing crystal in a first direction and accelerating the motion thereby detaching, from the crystal/liquid interface adhered impurity particles. The crucible may be rotated and the acceleration may be rotational.
Read the whole patent
Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed October 6, 1989. No grant is recorded for it in Canada; had it been granted, its 20-year term would have ended October 6, 2009.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by October 6, 2011.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.