Method of making an article comprising a heteroepitaxial structure, and article produced thereby

Abstract From the Canadian patent

Abstract, Disclosed is a technique, formed "mesotaxy" for producing a, heteroepitaxial structure comprising a layer of single crystal second material embedded in, and epitaxial with, a single crystal first material matrix. Mesotaxy comprises implantation of at least one chemical species (e.g. Co Ni, Cr, Y or, Mg) into a single crystal body (typically a semiconductor e.g. Si or Ge) such that, a buried layer rich in the implanted species is formed and heat treating the, implanted body such that a buried stoichiometric compound layer (e.g. CoSi2) isformed. Exemplarily 3 ? 1017/cm2 200 keV Co ions are implanted into (100) Si nominally at 350°C, followed by a heat treatment that consists of 1 …