Deposition feedstock and dopant materials useful in the fabrication of hydrogenated amorphous silicon alloys for photovoltaic devices and other semiconductor devices

Abstract From the Canadian patent

Compounds having the formula (MX3)n M'X4n wherein M and M' are different Group 4A atoms selected from the group of silicon, germanium and lead, one of M and M' is silicon X is, hydrogen, halogen or mixtures thereof and n is an integer, between 1 and 4, inclusive are useful as deposition feedstock, materials in the formation of hydrogenated amorphous silicon alloys useful in the fabrication of photovoltaic and other electronically active devices. Dopants having the formula (SiX3)m L X3-m wherein L is a Group 5A atom selected from the group of phosphorus, arsenic, antimony and bismuth X is, hydrogen, halogen or mixtures thereof and m is an integer between 1 and 3, inclusive, are useful in the …