Semiconductor structures and a method of manufacturing semiconductor structures
CA 1332341 C · Owner: Cooper, David Martin · Inventors: Nelson, Andrew William; Lealman, Ian Francis; Cole, Simon
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
In a semiconductor buried heterostructure laser having a, mesa 2, 3, 4 and confinement layers 5 6, 7 on a substrate, 12, at least the lowermost of the confinement layers 5 6, 7 is substantially planar up to the mesa. This is achieved by MOVPE growth of InP against lateral surfaces of the mesa 2, 3, 4 which are defined by distinct crystallographic planes of the material of the mesa. In particular (111) B InP planes are used. The laser is particularly for use in the field of optical communications.
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Granted October 11, 1994. A Canadian patent filed before October 1, 1989 lasted 17 years from grant, so its term ended October 11, 2011.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
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Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.