Expired Canadian patentCanada
Implantation and electrical activation of dopants into monocrystalline silicon carbide
CA 1332142 C · Owner: Davis, Robert F. · Inventors: Edmond, John A.; Davis, Robert F.
Overview
Drawings and full text
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
The invention is a method of ion implantation of dopant ions into a substrate of silicon carbide. In the method, the implantation takes place at elevated temperatures, following which the substrate may be oxidized or annealed.
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Granted September 27, 1994. A Canadian patent filed before October 1, 1989 lasted 17 years from grant, so its term ended September 27, 2011.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
FiledOctober 25, 1988
GrantedSeptember 27, 1994
Term endedSeptember 27, 2011
Patent numberCA 1332142 C
Classification (IPC)H01L21/26 +1 more
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.