Method of manufacturing a semiconductor device, in which a silicon wafer is provided at its surface with field oxide regions
CA 1330195 C · Owner: Koninklijke Philips Electronics N.V. · Inventors: Van Der Plas, Paulus A.; Snels, Wilhelmina C. E.
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
14, ABSTRACT:, Method of manufacturing a semiconductor device in, which a silicon wafer is provided at its surface with field oxide regions. A method of manufacturing a semiconductor device, in which a surface (1) of a silicon wafer (2) is locally provided with an oxidation mask (3) whereupon, the wafer is subjected to an oxidation treatment by heating it in an oxidizing gas mixture. According to the invention, the wafer is heated during the treatment in the oxidizing gas mixture to a temperature of 950 to 1050°C. Water is then added to the oxidizing gas mixture. The quantity of added water is initially less than 30 % by volume and later larger. Thus, in a comparatively short time a …
Read the whole patent
Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Granted June 14, 1994. A Canadian patent filed before October 1, 1989 lasted 17 years from grant, so its term ended June 14, 2011.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.