Method for connecting devices on an integrated circuit substrate to a metallization layer
CA 1325685 C · Owner: National Semiconductor Corporation · Inventors: Kulkarni, Vivek D.
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
A method for connecting devices on an integrated circuit substrate to a metallization layer where-, in a thin layer of a dielectric material is deposited on the substrate, and openings are formed in the dielectric layer wherein electrical connection is to be made to the substrate. A metal barrier layer then is deposited selectively in the openings of the dielectric layer, the barrier layer completely covering the exposed portions of the substrate. A pillar metal layer then may be deposited as a blanket coating over the dielectric layer and over the portions of the barrier layer covering the exposed portions of the substrate. The pillar metal layer is etched for forming metal pillars …
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Granted December 28, 1993. A Canadian patent filed before October 1, 1989 lasted 17 years from grant, so its term ended December 28, 2010.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.