Epitaxial gallium arsenide semiconductor wafer and method of producing the same

Abstract From the Canadian patent

A semiconductor wafer having an epitaxial GaAs layer including, a monocrystalline Si substrate and at least one intermediate layer epitaxially grown on the major surface of the monocrystalline Si substrate, as a buffer layer for accommodating a lattice mismatch between the Si substrate and the epitaxial GaAs layer which is formed epitaxially on a major surface of a top layer of the at least one intermediate layer. The at least one intermediate layer may comprise a GaP layer or one or more GaP/GaAsP, GaAsP/GaAs superlattice layers. The wafer may be used to produce a semiconductor light emitting element which has a plurality of crystalline GaAs layers including a light emitting layer …