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Expired Canadian patentCanada

Functional znse __te :h deposited film

CA 1320106 C · Owner: Nakagawa, Katsumi · Inventors: Kanai, Masahiro; Fujioka, Yasushi; Nakagawa, Katsumi

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Abstract From the Canadian patent

An improved functional ZnSe1-xTex:H film having a high doping efficiency and with no substantial change in the characteristics upon light irradiation. Said film is characterized in that the Se/Te quantitative ratio is in the range from 3:7 to 1:9 by the atom number ratio hydrogen, atoms are contained in an amount of 1 to 4 atomic % and the ratio of the crystal grain domains per unit volume is in the range from 65 to 85% by volume. There are also provided improved p-type and n-type ZnSe1-xTex:H:M films (M stands for a dopant) of high electroconductivity characterized in the foregoing way. These deposited films may be efficiently deposited even on a non-single crystal substrate made of metal …

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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.

Why it's free to use

  • Granted July 13, 1993. A Canadian patent filed before October 1, 1989 lasted 17 years from grant, so its term ended July 13, 2010.
  • We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
FiledJuly 29, 1988
GrantedJuly 13, 1993
Term endedJuly 13, 2010
Patent numberCA 1320106 C
Classification (IPC)H01L21/36 +2 more

Timeline

Timeline From CIPO dates

19891992199519982001200420072010Application filedJuly 29, 1988Patent grantedJuly 13, 1993Term endedJuly 13, 2010

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