Method for forming a deposited film
CA 1320102 C · Owner: Ueki, Masao · Inventors: Sakai, Akira; Matsuyama, Jinsho; Ueki, Masao
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
A method for forming a deposited film comprises the step of introducing a starting material (A) which is either one of a gaseous starting material for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidative action on said starting material into a film forming space in which a substrate having a material which becomes crystal neclei for a deposited film to be formed or a material capable of forming crystal nuclei selectively scatteringly on its surface is previously arranged to have said starting material (A) adsorbed onto the surface of said substrate to form an adsorbed layer (I) and the step of introducing a starting material (B) which is the …
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Granted July 13, 1993. A Canadian patent filed before October 1, 1989 lasted 17 years from grant, so its term ended July 13, 2010.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.