Method for forming deposited film
CA 1315614 C · Owner: Ishihara, Shunichi · Inventors: Hanna, Jun-Ichi; Ishihara, Shunichi; Shimizu, Isamu
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
A method for forming a deposited film comprises introducing a gaseous starting material for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidation action for said starting material into a reaction space to effect chemical contact therebetween to thereby form a plural number of precursors containing precursors under excited state, and forming a deposited film on a substarte existing in the film forming space with the use of at least one precursor of these precursors as the feeding source for the constituent element of the deposited film.
Read the whole patent
Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Granted April 6, 1993. A Canadian patent filed before October 1, 1989 lasted 17 years from grant, so its term ended April 6, 2010.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.