Wiring structure of semiconductor pressure sensor

Abstract From the Canadian patent

A semiconductor pressure sensor comprises a sensor chip including an etching stop layer of high concentration impurity ions formed by ion implantation of impurity ions into a substrate of silicon single crystal or by deposition and diffusion and an epitaxial growth layer of silicon single crystal on the etching stop layer a recess, formed in the back of the sensor chip by etching circuit, elements formed on the sensor chip diffusion leads for, connecting the circuit elements connecting regions, each, formed between the etching stop layer and a predetermined position on the surface of the sensor chip and diffusion, regions, each formed between the predetermined position and one of terminals …