Thin film transistor panel
CA 1313563 C · Owner: Sasaki, Makoto · Inventors: Sasaki, Makoto; Mori, Hisatoshi; Sato, Syunichi
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
A thin film transistor panel has a substrate on which a plurality of electrode lines are aligned in a matrix form, thin film transistors which are formed on crossing portions of the plurality of the electrode lines, a diffusible insulating film for covering said thin film transistors, and metal-diffused layers and are connected to source electrodes. The metal-diffused layers are formed by diffusing a metal into predetermined areas of said insulating film. If the metaldiffused layers are used as the pixel electrodes high, density display can be obtained due to the fine pixel electrodes. In addition, a manufacturing method of thin film transistor panel having the steps of forming gate …
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Granted February 9, 1993. A Canadian patent filed before October 1, 1989 lasted 17 years from grant, so its term ended February 9, 2010.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.