Pin junction photovoltaic element having i-type semiconductor layercomprising non-single crystal material containing at least zn, se andh in an amount of 1 to 40 atomic %

Abstract From the Canadian patent

An improved pin junction photovoltaic element which generates photoelectromotive force by the junction of a ptype semiconductor layer, an i-type semiconductor layer and an n-type semiconductor layer, characterized in that at least said i-type semiconductor layer comprises a member selected from the group consisting of a ZnSe:H deposited film containing the hydrogen atoms in an amount of 1 to 4 atomic % and crystal grain domains in a proportion of 65 to 85 vol % per unit volume and a ZnSe1-xTex:H deposited film containing the hydrogen atoms in an amount of 1 to 4 atomic % and crystal grain domains in a proportion of 65 to 85 vol % per unit volume and also containing the selenium atoms and …