P and n-type microcrystalline semiconductor alloy material including band gap widening elements devices utilizing same
CA 1310296 C · Owner: Ovshinsky, Stanford R. · Inventors: Ovshinsky, Stanford R.; Guha, Subhendu
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
An n-type. microcrystalline semiconductor alloy material including a band gap widening element; a method of fabricating p-type microcrystalline semiconductor alloy material including a band gap widening element; and electronic and photovoltaic devices incorporating said n-type and p-type materials.
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Granted November 17, 1992. A Canadian patent filed before October 1, 1989 lasted 17 years from grant, so its term ended November 17, 2009.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
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Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.