Graft base bipolar transistor
CA 1307357 C · Owner: Kayanuma, Akio · Inventors: Kayanuma, Akio
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
A so-called graft-base transistor is disclosed. The transistor is formed in an island shaped region surrounded by an insulating isolation region formed in an epitaxially grown semiconductor layer on a silicon substrate. A graft base region having higher impurity concentration is formed in the island-shaped region remote from the isolation region. A surface portion of the island shaped region between the isolation region and the graft base region is entirely depleted during operation.
Read the whole patent
Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Granted September 8, 1992. A Canadian patent filed before October 1, 1989 lasted 17 years from grant, so its term ended September 8, 2009.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.