Method for manufacturing double-diffused metal-oxide semiconductor fieldeffect transistor device and the device thereby manufactured
CA 1306313 C · Owner: Akiyama, Sigeo · Inventors: Akiyama, Sigeo; Suzumura, Masahiko; Nobe, Takeshi
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
One method for manufacturing double-diffused metal-oxide-semiconductor field effect transistor (DMOSFET) devices begins with forming an insulating layer having openings in its top surface on a semiconductor wafer. Channel regions well regions and source regions are then formed by two stage diffusions of impurity materials through the openings. The impurity materials are respectively of a different conductivity type from and the same conductivity type as the wafer. Next, masks are provided on the surface area over the drain regions and the source electrode regions that are to be connected to the well regions and source regions. An impurity material of the same conductivity type as the wafer …
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Granted August 11, 1992. A Canadian patent filed before October 1, 1989 lasted 17 years from grant, so its term ended August 11, 2009.
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Timeline
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Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.