Refractory metal - titanium nitride conductive structures and processes for forming the same
CA 1306072 C · Owner: Lee, Pei-Ing P. · Inventors: Kaanta, Carter W.; Leach, Michael A.; Pan, Pai-Hung
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
B??-86-011, ABSTRACT OF THE DISCLOSURE The present invention provides a conductive structure for use in semiconductor devices. The structure can be used to interconnect the various diffusion regions or electrodes of devices formed on a processed semiconductor substrate to a layer of metal to, interconnect overlying layers of metal or to provide the gate electrode of an FET device formed on the surface of a semiconductor substrate. Various embodiments of the invention are described but in broad form the active metallurgy of the present invention comprises a thin layer of titanium nitride and a thick layer of a refractory metal, e.g. tungsten or molybdenum, overlying the titanium nitride …
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Granted August 4, 1992. A Canadian patent filed before October 1, 1989 lasted 17 years from grant, so its term ended August 4, 2009.
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Timeline
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Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.