Semiconductor heat dissipating apparatus
CA 1303248 C · Owner: Sakanoue, Hitoyuki · Inventors: Sakanoue, Hitoyuki; Yamakawa, Akira; Miyake, Masaya
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
A member for a semiconductor apparatus for carrying or holding a semiconductor device, obtained by joining an aluminum nitride substrate and a radiating substrate comprise an insulating member formed by an aluminum nitride sintered body to be provided thereon with the semiconductor device and a radiating member to be joined to the insulating member. A metal material for forming the radiating member has thermal conductivity of at least 120 W/mK and a thermal expansion coefficient within a range of 4 to 6.0 x 10-6/K-1. Preferably the material forming the radiating member is prepared by a tungsten alloy containing copper by not more than 5 percent by weight.
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Granted June 9, 1992. A Canadian patent filed before October 1, 1989 lasted 17 years from grant, so its term ended June 9, 2009.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.