Photovoltaic element with a semiconductor layer comprising non-single crystal material containing at least zn, se and h in an amount of 1 to40 atomic %

Abstract From the Canadian patent

A photovoltaic element which generates photoelectromotive force by the connection of a p-type semiconductor layer and an n-type semiconductor layer characterized in, that at least one of said semiconductor layers is made up from a deposited film composed of zinc atoms selenium, atoms, optional tellurium atoms and at least hydrogen, atoms, said deposited film containing a p-type or n-type doping agent, containing 1 to 4 atomic% of hydrogen atoms containing selenium atoms and tellurium atoms in a ratio of 1:9 to 3:7 (in terms of number of atoms) and also, containing crystal grains in a ratio of 65 to 85 vol% per unit volume.