Method and apparatus for vapor deposition
CA 1302803 C · Owner: Imanaga, Syunji · Inventors: Imanaga, Syunji; Kawai, Hiroji; Hase, Ichiro
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
A method for vapor deposition includes monitoring of growth of semiconductor layer by way of in-situ monitoring. According to the invention in-situ, monitoring is performed by irradiating light beam onto the surface of the growing layer in a direction nearly perpendicular to the surface. Growth parameters of the layer can be detected by monitoring variation of the light reflected by the surface of the layer. Growth condition in vapor deposition chamber is feedback controlled based on the detected growth parameter.
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Granted June 9, 1992. A Canadian patent filed before October 1, 1989 lasted 17 years from grant, so its term ended June 9, 2009.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.