Silicon avalanche photodiode with low multiplication noise
CA 1301895 C · Owner: General Electric Canada Inc. · Inventors: Mcintyre, Robert J.
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
Abstract of the Disclosure, There is provided an n+-p-.pi.-p+ APD having a shallow and abrupt p-n junction located about 1 to 2 µm into the APD and having a p-type conductivity region containing acceptors in an uncompensated excess concentration corresponding to a dose of between about 5 and 10X1011, acceptors/cm2. The combination of the shallow p-n junction and the doping profile in the p-type concentration region gives rise to an electric field profile having multiplication spread substantially throughout the entire thickness of the central active region of the APD and having no drift region. The electric field profile peaks adjacent the p-n junction in a value of about 2.9 x105 volts/cm. …
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Granted May 26, 1992. A Canadian patent filed before October 1, 1989 lasted 17 years from grant, so its term ended May 26, 2009.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.