Method of epitaxially growing compound semiconductor materials
CA 1301035 C · Owner: Gte Laboratories Incorporated · Inventors: Shastry, Shambhu K.
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
Method of MOVPE growing a compound semiconductor material, for example GaAs, on a substrate for example, Si. Sodium ions are first introduced onto the substrate surface as by immersing it in a cleaning solution containing sodium. A two-step MOVPE process is then employed to grow device quality single crystal compound semiconductor material on the surface of the substrate.
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Granted May 19, 1992. A Canadian patent filed before October 1, 1989 lasted 17 years from grant, so its term ended May 19, 2009.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.