Semiconductor device radiation hardened mesfet
CA 1300763 C · Owner: Nishiguchi, Masanori · Inventors: Okazaki, Naoto; Nishiguchi, Masanori
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
This invention is for improving the radiation hardness or radiation resistance of GaAs MESFETs. According to this invention an n-type active layer is, formed by doping GaAs crystal evenly depthwise of the GaAs crystal, and a Schottky gate electrode is provided on the active layer, so that the carrier concentration in the active layer and the thickness of the active layer are set required values. According to this invention, not only in the case of a total dose of exposure radiation of R=1x109 roentgens but also in the case of a higher total dose, at least one of the threshold voltage Vth of the GaAs MESFET the saturated, drain current Idss there of and the transconductance gm, are in their …
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Granted May 12, 1992. A Canadian patent filed before October 1, 1989 lasted 17 years from grant, so its term ended May 12, 2009.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.