Semiconductor superlattice infrared source
CA 1299719 C · Owner: Liu, Hui Chun · Inventors: Liu, Hui Chun
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
An infrared emitting semiconductor device having a layer-shaped infrared emitting region with a superlattice structure. The superlattice structure consists of thin alternating narrow and wide wells separated by thin barriers. The narrow well has one quasibound state E'0 while the wide well has two states E0 and E1 with E0' being located between E0 and E1. Under proper bias an electron in state E0 can resonately tunnel out of the well through the quasibound state E'0 to the first excited state E1 of the next wide well. This electron can then relax to the ground state E0 where it can resonately tunnel to the next wide well and repeat the process. Infrared radiation with its photon energy …
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Granted April 28, 1992. A Canadian patent filed before October 1, 1989 lasted 17 years from grant, so its term ended April 28, 2009.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.