Device fabrication method using spin-on glass resins and devices formed thereby

Abstract From the Canadian patent

A new method for fabricating a device, such as a semiconductor device, is disclosed. The method includes the step of patterning a substrate (e.g. 10) with a trilevel resist (e.g. 30) containing a spin-deposited substitute (e.g. 50) for the conventional central silicon, dioxide region. This substitute includes an organosilicon glass resin in combination with metal-and-oxygen containing material. The inventive method prevents the losses of linewidth control, and avoids the pattern degradation due to undesirably many pinholes, of previous such methods.