Technique for fabricating complementary dielectrically isolated wafer
CA 1297210 C · Owner: American Telephone And Telegraph Company · Inventors: Leffel, Daniel David; Easter, William Graham
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
Technique For Fabricating Complementary Dielectrically Isolated Wafer, Abstract A method has been developed for providing tub regions with various resistivities in a dielectrically isolated (DI) structure. The starting substrate material is etched to expose the locations designated for a resistivity modification and epitaxial material of the modified resistivity value is used to fill the exposed tubs. The remainder of the fabrication process follows conventional DI fabrication techniques. The procedure may simply be used to create a DI structure containingboth n-type and p-type tub regions. The idea may also be extended however, to, providing separate tubs with for example, n+ resistivity, …
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Granted March 10, 1992. A Canadian patent filed before October 1, 1989 lasted 17 years from grant, so its term ended March 10, 2009.
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Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.