Semiconductor laser structures
CA 1295722 C · Owner: Ipg Photonics Corporation · Inventors: Adams, Michael John; Westbrook, Leslie David
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
A laser structure with highly p-doped active material is described which has a particularly low linewidth enhancement factor .alpha.. Hence the emission linewidth of the laser structure 1 is relatively small. The structure 1 shows a particular relationship between the photon energy E, the band gap energy Eg and the conduction band quasi Fermi level Efc of the active material which minimises .alpha. the valence band being degenerate. These conditions can be used to design low .alpha. laser structures. Structures according to embodiments of the invention are of particular application to directly modulated lasers or absorption modulators and also find application in coherent optical detection.
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Granted February 11, 1992. A Canadian patent filed before October 1, 1989 lasted 17 years from grant, so its term ended February 11, 2009.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.