Bulk avalanche semiconductor laser

Abstract From the Canadian patent

A bulk semiconductor laser which uses optically triggered avalanche conduction to initiate the lasing action in the bulk. A semiconductor block has electrodes coupled on opposing sides and a high voltage is applied across the electrodes which is less than the voltage required for avalanche breakdown. The block is irradiated with light which produces charge carriers in the block to initiate avalanche conduction which results in a large number of charge carriers. The charge carriers recombine to generate a second amount of electromagnetic radiation. This radiation is reflected back into the block on two opposing sides thus resulting in a laser emission.