Field effect transistor
CA 1294064 C · Owner: Sasaki, Goro · Inventors: Sasaki, Goro
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
Abstract, A field effect transistor (FET) has an In P substrate of semi-insulation material. A non-doped Ga In As layer is epitaxially grown on the In P substrate and an n type, Ga In As P layer is epitaxially grown on the Ga In As layer. An Al In As layer is formed directly or through another, In P layer, on the Ga In As P layer by epitaxial growth. A source electrode and a drain electrode are formed on the Al In As layer with ohmic contacts, and a gate electrode is formed on the Al In As layer with a Schottky contact. The arrangement enables an enhancement type FET which is superior, in relation to the ease of construction of the power supply to be of the heterojunction type using two …
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Granted January 7, 1992. A Canadian patent filed before October 1, 1989 lasted 17 years from grant, so its term ended January 7, 2009.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.