Detector and mixer diode operative at zero bias voltage and fabrication process therefor

Abstract From the Canadian patent

This invention is directed to an NPIN (or PNIP) diode structure and epitaxial process for fabricating same wherein the thickness and doping levels of the intermediate layers of the structure are such that these layers are substantially depleted of majority carriers and therefore enable the structure to be operated at zero volts DC bias. This structure may be utilized either as an efficient detector diode or a mixer diode substantially free of odd order harmonic mixing products, and both devices may be fabricated in a single molecular beam epitaxial process with the advantage of high control over epitaxial layer thickness and impurity concentration.