Epitaxial gallium arsenide semiconductor wafer and method of producing the same

Abstract From the Canadian patent

A semiconductor wafer having an epitaxial GaAs layer including a monocrystalline Si substrate having a major surface which is inclined at an off angle between 0.5° and 5° with respect to (100); and at least one intermediate layer epitaxially grown on the major surface of the monocrystalline Si substrate, as a buffer layer for accommodating a lattice mismatch between the Si substrate and the epitaxial GaAs layer which is epitaxially grown on a major surface of a top layer of the at least one intermediate layer. The at least one intermediate layer may comprise a GaP layer or one or more GaP/GaAsP GaAsP/GaAs superlattice, layers. The wafer may be used to produce a semiconductor light emitting …