Transistor comprising a 2-dimensional carrier gas collector situated between emitter and gate

Abstract From the Canadian patent

Abstract, A previously ignored property of a degenerate 2-dimensional gas of charge carriers in a quantum well (to be termed the quantum-capacitance effect) makes possible a novel class of transistors. In these devices the collector (a quantum well having high transverse conductance) is located between gate and emitter, with a barrier layer between emitter and collector and a relatively thin, barrier layer between collector and gate and the chemical compositions and/or, thicknesses of the various layers are chosen such that application of a voltage to the gate results, as a manifestation of the quantum-capacitance effect in an, induced charge in the emitter, whereby a current between …