Etching process for fabricating integrated-circuit devices utilizing multilevel resist structure and employing carbon dioxide plasma
CA 1289682 C · Owner: American Telephone And Telegraph Company · Inventors: Kornblit, Avinoam
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
Abstract: This invention is a method of fabricating an integrated-circuit device by utilizing a multilevel structure that includes a planarizing layer. Reactive ion etching of the planarizing layer of a multilevel resist structure utilized to make integrated-circuit devices is carried out employing a plasma derived from carbon dioxide. The etching step is characterized by high throughput, good linewidth control negligible, radiation damage and low sensitivity to process parameter variations.
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Granted September 24, 1991. A Canadian patent filed before October 1, 1989 lasted 17 years from grant, so its term ended September 24, 2008.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
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Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.