Method of manufacturing devices including a semiconductor/dielectric interface

Abstract From the Canadian patent

This invention is a method of manufacturing devices including a semiconductor/dielectric interface wherein at least a monolayer of the dielectric layer is in an ordered state. Dielectric compound layers having ordered interface structure can be produced on strained semiconductor materials, e.g. by native growth. For example, a 5 x 5 reconstruction at the interface between silicon and silicon oxide results upon oxidizing a thin layer of (111)-silicon which is on a layer of relaxed germanium-silicon. Also, an ordered silicon oxide can be grown on a (100)-silicon surface which is atomically smooth or whose surface steps are two monolayers high. Ordered surface structure is of interest in …