Vlsi devices having interconnect structure formed on layer of seed material

Abstract From the Canadian patent

Abstract of the Disclosure In methods for making interconnect structures for semiconductor devices a layer of seed material is formed on a first substantially planar dielectric layer at predetermined locations where interconnect conductor is desired, a second substantially planar dielectric insulating layer is formed over the first substantially planar dielectric insulating layer, the second layer having openings extending therethrough at the predetermined locations to expose at least a portion of the seed material and, conductive material is selectively deposited on the exposed seed material to fill the openings. The seed material may be a material in the group consisting of aluminum …