Resist process using polysulfone polymers

Abstract From the Canadian patent

Abstract of the Disclosure, A resist mask is formed on a substrate by first forming a film of an olefin-sulfone polymer on the surface of the substrate and patterning the film to expose part of the surface. The patterning operation includes exposing portions of the film to degrading radiation. Background of the Invention This invention relates generally to the formation of resist masks and more particularly to the formation of positive resist masks of olefinsulfur dioxide polymers such as by electron beam exposure. The formation of etch resistant positive resist masks using radiation degradable polymers and copolymers is described for example, in, United States Patent 3,535,137. A layer of …