Schottky barrier diode with highly doped surface region
CA 1285334 C · Owner: Fairchild Semiconductor Corporation · Inventors: Jerome, Rick C.; Mcfarland, Duncan A.
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
8332-158/53.1094, IMPROVED SCHOTTKY BARRIER DIODE FOR ALPHA PARTICLE RESISTANT, STATIC RANDOM ACCESS MEMORIES ABSTRACT OF THE DISCLOSURE, An improved Schottky barrier cliode for increasing the alpha particle resistance of static random access memories includes an extra implanted N-type region at the surface of the epitaxial layer to increase the impurity concentration there to about 1x1019 atoms per cubic centimeter. In one device arsenic is employed to overcompensate a guard ring where the Schottky diode is to be formed while in, another device phosphorus is employed and the guard ring is not overcompensated. The resulting Schottky diodes, when employed in the static random access memory …
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Granted June 25, 1991. A Canadian patent filed before October 1, 1989 lasted 17 years from grant, so its term ended June 25, 2008.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
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Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.