Semiconductor device with low defect density oxide

Abstract From the Canadian patent

Semiconductor Device with Low Defect Density Oxide Abstract, Low defect density oxides suitable for use as thin gate oxides or in charge storage capacitors are described. First and second dielectric layers are formed on a substrate with misaligned defect structures. A third layer (an oxide) is then grown by diffusing an oxidizing species through the first and second layers to the substrate. The species reacts with the substrate. The low defect density results from the misaligned defect structure of the first and second layers. In one embodiment, the first and second layers are grown and deposited oxides respectively. The third layer is grown by diffusing oxygen through the first two layers, …